ADVANCE QUANTUM DEVICES LAB

Memory technologies are one of the main factors, which are limiting further progress in computer technologies. The solution to this problem could be alternative memory technologies, such as PCM, MeRAM, STT-RAM and CCM. CCM devices exhibit low operating voltages, are ultrafast, durable and are non-volatile at cryogenic temperatures, which makes them an ideal candidate for memory devices in superconducting and quantum computers.

Electric pulses at picosecond time scales need to be used to probe intrinsic switching time of ultrafast phase transitions, which is challenging due to limitations of signal generators. We fabricate an electronic circuit with a photoconductive switch on a semiconducting substrate CdMnTe that is designed for excitation and detection of picosecond electrical pulses generated by an ultrafast laser pulse.

Transmission line architecture allows for efficient propagation of picosecond electric pulse towards the 1T-TaS2 crystal and measurement of the crystal resistance state.